Monolithic integrated structure including fabrication thereof



I. FEINBERG ET AL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed may 23, 1967 OxIDIzE wAFER SURFACE TO cREATE DEPRESSION ABOVE N REGIONS l I I REMOVE OXIDE LAYER EPITAXIALLY GROW A LAYER OF N TYPE MATERIAL ON THE wAFER SURFACE AND ON THE N*REOIONs I OXIDIZE SURFACE OF EPITAXIALLY; GROWN LAYER I MASK AND ETCH A NETWORK OF CHANNELS IN THE OXIDE LAYER EXPOSING THE SEMI- cONDucTOR SURFACE (MASK s) DIFFUSE P TYPE ISOLATION REGIONS REOXIDIZE WAFER SURFACE MASK AND ETCH HOLES IN OXIDE LAYER ABOVE EPITAXIALLY GROWN REGIONS (MASK c) DIFFUSE P TYPE BASE AND RESISTOR REGIONS INTO ISOLATED N TYPE EPITAXIALLY GROWN REGIONS OXIDIZE SURFACE AND DRIVE IN IMPURITIES FORMING THE BASE AND RESISTOR REGIONS MASK AND ETCH HOLES IN OXIDE LAYER ABOVE BASE REGIONS AND 2R AND 3R RESISTOR REGIONS(MASK-D) 56 Sheets-Sheet l FIG.

DIFFUSE IN N TYPE IMPURITIES TO FORM EMITTER REGIONS AND ALSO TO FORM N REOIONs FOR 2R AND 3R RESISTORS I DRIVE IN IMPURITIES FORMING THE EMITTER REGIONS FORM OPENINGS IN FIRST PHOTO RESIST LAYER FOR MAKING CONTACT TO DESIRED SEMICONDUCTOR REGIONS (MASK-E1 I REPEAT PHOTOLITHOGRAPHIC MASK AND ETcH NOOPERATION TO PREVENT PINHOLES IN OxIDE LAYER (MASK-E12) I FORM METAL INTERcONNEcTIONs I AND OHMIC cONITAcTs (MASK F) I L APPLY SPUTTERED OXIDE OVERCOAT I v I MASK AND ETCH TERMINAL HOLES IN SPUTTEREID OXIDE OVERCOAT LAYER (MA EVAPORATE CR, CU, AND AU INTO TERMINAL HOLES (MASK-H) EVAPORATE OVERSIZE PB-SN PADS ONTO CR, CU,.AU LAND PORTIONS (MASK-I) MELT PADS TO REFLOW BACK TO LANDS I DICE wAFER INTO CHIPS I APPLY MONOLITHIC INTEGRATED CHIPS ON PRINTED LAND PATTERNS ON CERAMIC SUBSTRATE INTERCONNECT MONOLITHIC INTERGRATED CHIPS TO PRINTED LAND PATTERIN INVENTORS IRVING FEINBERG JACK LEE LANGDON CARL LEE SITLER ATTORNEY No TU, m0

l. FEINBERG ETAL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed may 25, 1967 56 Sheets-Sheet 2 OUTPUT Pfi' EM|TTE R F0 LLOWER) 1RA T5 T Pi LIT-LA. PH INPUT P P OUTPUT 0R P2 0RP6 TTTPuT' 2R T1 2R P10 2R T2 OUTPUT O- O/ 3" UP UT P9 -v 0R P4, T EMITTER FWER) INPUT ms T3 "28% [15 N P8 P P OUTPUT L n 0R PT \CURRENT SWITCH OUTPUT VP9 1R ,J

H mm CLAMPED 1R INPUT FOLLOWER P P9 SWITCH "J P12O EMITTER T PTPuT FOLLOWER P8 V T| ouTPuT TR I 1RA 2R P10 2R P6 JAZ/R T1 T1 T2 UTPUTO W REE ()(gTEUT VOLT. 0F

PHASE) PT INPUT 1R3 P9 1R8 CURRENT sPTTcH P9 CLAMPED i I EMITTER OUTPUT ZJ INPUT CURRENT FOLLOWER P7 SWITCH V O CLAMPED T T FOLLOW 1R EMITTER FOLLOWER Q p4 V o OUTPUT Wfififi P9 P4 HGEQ (m PHASE) I. FEINBERG ETAL I 3,539,876

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23, 1967 56 Sheets-Sheet 5 10R /sTEP 5 24R SR/ soaa STEP 5 554R FIG.2R

b i- W0 I zosa STEP 6 (200R 214R) *,22012 g20R [214R 210R m a W 266R n s STEP 7 200R STEP 4 2oeR FIG.

W, IMO I. FEINBERG ETAL 3,539,876

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 25, 1967 36 Sheets-Sheet 4- NQV. 1Q, 1979 FElNBERG ET AL 3,539,876

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23, 1967 36 Sheets-Sheet 5 FIG.1T

m 241 521 301 SGT) a I! /l 241 m 321 42TE46T 3ST 441 501 401 gm w 2 le ww M 5 STEP? 16H r B E FIG. 2T

10, 1970 I, FEINBERG ETAL 3,539,876

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23, 1967 56 Sheets-Sheet 6 Nov.' 10, 1.970 1, FEmBERG ETAL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed may 23, 1967 36 Sheets-Sheet '7 7 l. FEINBERG ETAL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed may 23, 1967 56 Sheets-Sheet 9 III ilk r||||||| FIG. 4B

NOV. 10, 1970 l I BE G ETAL 3,539,876

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23, 1967 56 Sheets-Sheet 10 FIG. 40

32T 30T 36T 30T 34T B Nov. 10, 1970 FElNBERG ETAL 3,539,876- MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRIGAT'IOMNHEREQF Filed may 25. 1967 36 Sheets-Sheet 11 @265 m2 SE5 b52222.

a s: a:

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23, 1967 10, 1970 l. FEINQERG ET 36 Sheets-Sheet 1.?

FIG. 5B

NOV 10, 1970 1, FEINBERG ETAL 3,539,876

MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23, 1967 36Sheets-Sheet 14 OUTPUT F T3\ i OUTPUT EXTERNAL ELECTRTCAL CONNECTION (0N MODULE) OUTPUT NW. 10, 1970 N ER'G ETAL uoiwouwmc INTEGRATED smucwunamcwvme FABRICATION THEREOF se Sheets-Sheet 16 Filed May 23, 1967 FIG. 6A

FIG.6'

: T .L. .L|

FIG. FIG.

NOW 1970 1. FEINBERG ETAL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 23. 1967 86 Sheets-Sheet 1'7 FIG. 6B

ALIGNMENT /SYMBOL FOR DICING TjST TRANSISTOR E EIL NOV. 10, 1970 FElNBERG ETAL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 25, 1967 36 Sheets-Sheet 19 bdrm I. FEINBERG ETAL MONOLITHIC INTEGRATED STRUCTURE INCLUDING FABRICATION THEREOF Filed May 25. 1967 M n I MASK D.

MASK C 56 Sheets-Sheet 20 Mil l FIGJO PIC-3.9 

